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SiC Wafers for Power Semiconductors

DESCRIPTION

We undertake SiC power semiconductor wafer production processes with Hi-LoDe LapTM, which harnesses our ceramic material polishing technologies accumulated over the years, and Hi-LoDe EpiTM, which is aimed at reducing defects.

Features:

Our SiC epitaxial wafer has the following features.

  • High flatness achieved by high-precision polishing technology
  • Minimizing hidden scratches of SiC wafer by unique CMP
  • Contributes to improving the productivity of SiC devices
REVENUES
1000 B
OVERSEAS SALES RATIO
0 %
EMPLOYEES
26300

LEADING SUSTAINABILITY BY HIGH PERFORMANCE